BCCMS  /  Veranstaltungen  /  2012  /  DSEM  /  Program
English  /  Deutsch

Friday, September 14th 2012
(BCCMS – University Campus, TAB Building)

08:20

-

08:30

 

Opening and welcome

Morning session:

 

 

 

 

Chair: J. Weber

8:30

-

09:05

 

Á. Gali
Silicon carbide is forever -- what we learnt from Peter in defect physics

09:05

-

09:40

 

E. Janzén
Isotope-pure SiC - the ultimate material for power devices

09:40

-

10:15

 

U. Gerstmann
Coordination defects at the Si/SiO2 and c-Si/a-Si (111) interfaces

10:15

-

10:35

 

Coffee Break

10:35

-

11:10

 

C. Ewels
Interfaces and mechanical properties of carbon nanostructures derived from DFT and DFTB

11:10

-

11:45

 

R. Rurali
SiGe nanowires: defects and impurity in axial and radial heterostructures.

11:45

-

12:20

 

F. Bechstedt
On polytypism in III-V nanowires

12:20

-

14:00

 

Lunch

Afternoon session:

 


 

 

 

 

Chair: F. Bechstedt

14:00

-

14:35

 

L. Geelhaar
Doping of group-III-arsenide and group-III-nitride nanowires

14:35

-

15:10

 

N. T. Son
Shallow and DX behaviour of Si and O in AlGaN and AlN

15:10

-

15:45

 

J. Weber
Recent results on hydrogen in crystalline semiconductors

15:45

-

16:05

 

Coffee break

16:05

-

16:40

 

P. Pichler
Boron-interstitial clusters in silicon

16:40

-

17:15

 

A. Kováts
Investigation of plasma composition in CVD diamond deposition

17:15

-

17:50

 

C. Harris
Wide bandgap semiconductors – a mainstream commercial technology


19:30



 

Conference dinner