Friday, September 14th 2012 (BCCMS – University Campus, TAB Building) |
08:20 | - | 08:30 | | Opening and welcome |
Morning session: | | |
| | Chair: J. Weber |
8:30 | - | 09:05 | | Á. Gali Silicon carbide is forever -- what we learnt from Peter in defect physics
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09:05 | - | 09:40
| | E. Janzén Isotope-pure SiC - the ultimate material for power devices |
09:40
| - | 10:15 | | U. Gerstmann Coordination defects at the Si/SiO2 and c-Si/a-Si (111) interfaces
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10:15 | - | 10:35 | | Coffee Break |
10:35 | - | 11:10 | | C. Ewels Interfaces and mechanical properties of carbon nanostructures derived from DFT and DFTB
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11:10 | - | 11:45 | | R. Rurali SiGe nanowires: defects and impurity in axial and radial heterostructures.
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11:45 | - | 12:20 | | F. Bechstedt On polytypism in III-V nanowires
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12:20 | - | 14:00 | | Lunch |
Afternoon session: | |
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| | | | Chair: F. Bechstedt |
14:00 | - | 14:35 | | L. Geelhaar Doping of group-III-arsenide and group-III-nitride nanowires
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14:35 | - | 15:10 | | N. T. Son Shallow and DX behaviour of Si and O in AlGaN and AlN
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15:10 | - | 15:45 | | J. Weber Recent results on hydrogen in crystalline semiconductors
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15:45 | - | 16:05 | | Coffee break
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16:05 | - | 16:40 | | P. Pichler Boron-interstitial clusters in silicon |
16:40 | - | 17:15 | | A. Kováts Investigation of plasma composition in CVD diamond deposition |
17:15 | - | 17:50 | | C. Harris Wide bandgap semiconductors – a mainstream commercial technology
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19:30 |
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| | Conference dinner |