Description
Point defects acting as color centers in solids may realize single photon source and quantum bits that can be harnessed in quantum information processing and nanoscale sensor applications which may revolutionize the info-communication technology, biological research and therapy. The leading contender is the nitrogen-vacancy center in diamond which may be considered as a robust quantum tool. Several quantum algorithms and protocols for sensing have been already demonstrated by this center. However, researchers face many materials science problems in order to maintain the favorable intrinsic properties of this color center that can be perturbed by other defects either in bulk or at the surface of diamond that is difficult to resolve because of its chemical hardness and the concurrent stability of carbon allotropes. Recently, theory-driven search for alternative materials could identify other quantum bit candidates in technologically mature wide band gap semiconductors, particularly silicon carbide, that have been recently demonstrated in experiments. However, the knowledge about these color centers is scarce and only the tight collaboration of experimental and atomistic simulation researchers would lead to a rapid progress in the field. The proposed workshop aims at bringing together world-leading experts in all these fields to improve interdisciplinary cooperation overcoming traditional boundaries between scientific disciplines.
The scientific objectives of the proposed workshop are:
- Bring together researchers from materials growth, defect engineering, surface chemistry, quantum optics, spin physics and theory at phenomenological and atomic scale level to highlight recent progress and discuss challenges and opportunities in the host materials and the embedded defects from the aspect of realization and control of quantum bits for quantum information processing and sensing.
- To foster the exchange of methodological expertise and new developments between scientists working on different aspects of diamond, silicon carbide and related materials.
- To discuss possibilities for optimizing the materials properties and device design aided by theory. The interdisciplinary character of the workshop will help finding solutions for overcoming current limitations.
- Provide opportunity to form new worldwide interdisciplinary collaborations on solid state quantum bits for the mutual benefit of theoretical, experimental and applied researchers.
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